• Gehäuse: SOT223. • Kanal-Art: stark. • Polarisierung: unipolar. • Drain-Source Spannung: 55V. Technische Daten. • Transistor-Typ: N-MOSFET. • Drainstrom: 3.8A. • Verlustleistung: 2.1W.
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Transistor FDD8880. intensité: 58A.
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DTC114EUA silk screen 24 SOT-323 50V/50mA NPN. 20pcs SMD Triode DTC114EUA/143ZCA/143ECA silk screen 23/24 NPN transistor. DTC143ZCA silk screen E23 SOT-23 50V/100mA NPN. DTC143ECA screen printing 23 SOT-23 50V/100mA NPN.
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