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• Gehäuse: DFN5x6D •. Transistor: N-MOSFET x2; unipolar;. • Polarisierung: unipolar •. • Drainstrom: 67/31A •. • Transistor-Typ: N-MOSFET x2 •. • Verlustleistung: 18/8W •. • Drain-Source Spannung: 30V •.
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Corpo DPAK. Potenza dissipata 38W. Tipo del transistor P-MOSFET. Polarizzazione unipolare. Tecnologia HEXFET®.
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SMD Transistor Triode Samples Book. Clear label on the front and on the back of every paper taping, never mixed up. Beginner hobbyists and veteran electronics experts alike will appreciate the variety and organization of components included with this kit.
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PMBFJ175,215 Kleinsignaltransistor P-Kanal 30V SMD/SMT SOT-23 von NXP Semiconductors.
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