Tipo:MOSFET N-Channel. 1 × Transistor MOSFETIRFP064N. Pronto per l’installazione. Mai utilizzato.
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Lake People G111 MKII Phone-Amp, Amplificatore per cuffie, Amplificatore a transistor, Potenziometro Alps RK 27 per la regolazione del volume, Pre-Gain (preamplificazione commutabile a 5 livelli), Struttura a canali separati, Amplificatori di...
Thomann Italia
Enhance your power electronics projects with these robust IRF064 Power N-Channel MOSFET Transistors. ✅ Type: N-Channel MOSFET. ✔️ High current capacity for demanding applications.
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"EBS Magni 502-210, Amplificatore combo a transistor per basso elettrico, 1 canale, Potenza: 500 W RMS, Risposta in frequenza: 45 - 20.000 Hz, Configurazione: 2 altoparlanti al neodimio da 10"" con tweeter, Altoparlanti frontali e posteriori...
Thomann Italia
Dalbani is a national and international distributor of high quality electronic components and parts. At Dalbani we like to differentiate between new, previously installed parts (used), and parts made by 3rd party manufacturers.
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Antelope Zenith 2, Interfaccia audio USB-C 2x2, Con elaborazione degli effetti DSP, Conversione AD/DA: 32 bit/192 kHz, Range dinamico: max. 123 dB, THD+N: -98 dB, 2 preamplificatori discreti a 6 transistor con gain di 75 dB, Modalità Hi-Z e Line per...
Thomann Italia
1 PEZZO Transistor IRFP064N IRFP 064 N Mosfet canale N. Nota: Nella maggior parte degli articoli sono disponibili piu' lotti.
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Type of Transistor: MOSFET. device design that HEXFET Power MOSFETs are well. applications where higher power levels preclude the use of. Maximum Power Dissipation (Pd): 300 W. - Advanced Process Technology.
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Type of Transistor: MOSFET. device design that HEXFET Power MOSFETs are well. applications where higher power levels preclude the use of. Maximum Power Dissipation (Pd): 300 W. - Advanced Process Technology.
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Type of Transistor: MOSFET. device design that HEXFET Power MOSFETs are well. applications where higher power levels preclude the use of. Maximum Power Dissipation (Pd): 300 W. - Advanced Process Technology.
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Transistortyp: N-MOSFET. Thermischer Widerstand (Übergang–Gehäuse): 1 K/W. Durchlasswiderstand (RDS(on)): 8 mΩ. Gate-Source-Spannung: 20 V. Gehäuse: TO-247AC.
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