Storage capacity of up to 2 TB in compact M.2 form factor (2280), suitable for high-performance PCs and ultrabooks.
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Connector: M.2 2280. Interfaces: PCIe Gen 4, Backwards compatible with PCIe Gen 3.
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M.2 (2280). Samsung V-NAND 3-bit MLC. (1TB) Samsung 1GB low-power DDR4 SDRAM. (2TB) Samsung 2GB low-power DDR4 SDRAM. 80 x 24.3 x 8.2 mm. 1500 G&0.5 ms (half sine). working temperature. 255.75 USD.
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Internal Solid State Drive (SSD). TCG/Opal IEEE1667 (Encrypted drive). Form Factor. Max Sequential Read. AES 256-bit Encryption (Class 0). V7 V-NAND 3bit MLC.
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MZ-V9P4T0CW (4TB). MZ-V9P2T0CW (2TB). MZ-V9P1T0CW (1TB). Reaching the PCIe Gen4 performance limits showing up to 7,450/6,900MB/s for Sequential Read/Write. Device Type: Internal Solid State Drive (SSD).
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MZ-V9P4T0CW (4TB). MZ-V9P2T0CW (2TB). MZ-V9P1T0CW (1TB). Reaching the PCIe Gen4 performance limits showing up to 7,450/6,900MB/s for Sequential Read/Write. Device Type: Internal Solid State Drive (SSD).
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M.2 (2280). Capacity (2TB). (2TB) Samsung 2GB low-power DDR4 SDRAM. (2TB) Up to 7450 MB/s. (2TB)Up to 6,900 MB/s. Average: (1TB) 5.4W, (2TB) 5.5W. Maximum: (1TB) 7.8W (peak), (2TB) 8.5W (peak). Maximum: (1TB) 50mW, (2TB) 55mW.
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Prestazioni più efficienti. PCIe 4.0 al massimo della potenza. Efficienza energetica all'avanguardia.
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