20 x IRF3205 IR MOSFET N-CHANNEL HEXFET Power Transistor. Type of Transistor: MOSFET. Maximum Drain Current 'Id': 110 A. Maximum Power Dissipation (Pd): 200 W. Advanced Process Technology. Maximum Junction Temperature (Tj): 175 °C.
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10 IRF3205 Mosfets. Mosfet Typ: N-Kanal.
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10 Mosfet IRF3205. Tipo Mosfet: canale N. Tensione nominale: 55 V.
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◆If there are no special circumstances, your product will not be delayed in arrival.
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Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A⑤). 20 PCS a lot.
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Case: TO220AB. Manufacturer: Infineon (IRF). Polarization: Unipolar. Drain current: 80A. Power dissipation: 200W. Transistor Type: N-MOSFET. Mounting: THT. Resistance in line state: 8mΩ.
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10 IRF3205 Mosfets. Mosfet Typ: N-Kanal.
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10 IRF3205 Mosfets. Mosfet Type: N-channel.
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