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20 x IRF3205 IR MOSFET N-CHANNEL HEXFET Power Transistor. Type of Transistor: MOSFET. Maximum Power Dissipation (Pd): 200 W. Advanced Process Technology. Maximum Junction Temperature (Tj): 175 °C. Maximum Drain Current 'Id': 110 A.
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Wholesale price ?. Handle fee?. Other countries.
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Drain-Source On-State Resistance Rds(on): 8.0 mΩ. Pulsed Drain Current Idm: 390 A.
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5Pcs IRFZ44N 49A/55V. 1 Set 50PCS TO-220 Series MOS Tubes. Due to the difference between different monitors. 5Pcs IRF530N-17A/100V. 5Pcs IRF9540-23A/100V.
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