The ultra-low noise large-area photodiode amplifier (optional silicon photocell) has a drive capacitance of up to 4000pF. Thus, it is suitable for amplifying Hamamatsu S1227-1010BQ and other compatible photodiodes.
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UV detector spectrum: 320 nm to 390 nm. UV sensor spectrum: bandpass 320 nm - 390 nm. Sensor structure: exclusive UV photo diode & UV color correction filter. Four range selection switchable.
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It is a photo diode that is made in the United States and is ideal for use in detecting light and other electromagnetic waves. Photoconductive Detector Series Planar Diffused Silicon Photodiode. United Detector Technology.
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Wavelength: 940nm. Mounting Type: Through Hole. Viewing Angle: -. Active Area: 1mm². Current - Dark (Typ): 200pA.
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Wavelength response range: 800nm~1750nm. Imported infrared photodiode for Hamamatsu. The output impedance inside the detector is 1MΩ. For users to get the right response speed, the appropriate resistor must be connected in parallel to the output.
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TECNOLOGIA DEL RILEVATORE UDT UNITED FOTODIODO SENSORE LUCE UV20 COME PIC & 8C-A-92Grazie.
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FOR GAP-PD New Gallium Phosphide Photodiode 150NM-550NM GAP150440D
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Resolution : 0.01 (0~100 NTU), 0.1 (100~999 NTU), 1 (999~1100 NTU). Accuracy :± 2% (0~500 NTU) ± 3% (501~1100 NTU). Stray Light : <0.02 NTU. It includes a light source and a detector to monitor the light scattered at 90 degree with respect to the incident beam.
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