RF POWER TRANSISTOR NPN SILICON. • Implanted Emitter Ballast Resistors for Improved Ruggedness. Download ：65W, 512MHz . • Specified 12.5 Volt, 512 MHz Characteristics. from 400 to 520 MHz. Designed for 12.5 Volt UHF large–signal, common emitter, class–C amplifier.
eBay